Parts comparison

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IRLZ44N2N7000

Structured comparison

Conditions and source links stay attached to each value. No automatic winner is declared.

Comparison of IRLZ44N, 2N7000
Attribute	IRLZ44NIRLZ44NPBF	2N70002N7000
Overview
Manufacturer	Infineon Technologies	onsemi
Category	MOSFET	MOSFET
Object type	discrete	discrete
Package	TO-220	TO-92
Documented pins	3	3
Interfaces	Digital	Digital
Lifecycle	ACTIVE	ACTIVE
Physical pin mapping	Unknown	Unknown
Browser simulation	Not available	Not available
Electrical
Channel	nSource	nSource
Max Vds	55 VSource	60 VSource
Vgs Threshold	1 – 2 V @ Vds: Vds = Vgs (diode-connected), Id=250 uASource Threshold is only the onset of conduction, not a fully-on gate voltage. Use the RDS(on) test conditions to choose gate drive.	2.1 V @ Vds: Vds = Vgs (diode-connected), Id=1 mASource
Max Vgs	Unknown	30 VSource ±30V, symmetric rating for current onsemi 2N7000TA/BU documentation.
Rds(on)	22 mΩ @ Vgs=10 V, Id=17 ASource Still just 0.025Ω at Vgs=5V and 0.035Ω at Vgs=4V — this is what 'logic level' buys you: it stays low-resistance without a full 10V gate drive, unlike the IRF540N.	5 Ω @ Vgs=10 V, Id=500 mASource 5.3Ω max at Vgs=4.5V, Id=75mA — usable but noticeably worse at true logic-level (not full 10V) gate drive.
Continuous Id	47 A @ Tcase=25 °CSource Drops off sharply with case temperature — don't expect anywhere near 47A without a heatsink and good PCB copper.	200 mA @ Tamb=25 °CSource
Gate Charge	Unknown	Unknown
Logic Level	YesSource	Unknown
Physical
Package	TO-220Source	TO-92Source
Mounting	thtSource	thtSource
Thermal
Max Power Dissipation	110 W @ Tcase=25 °CSource	350 mW @ Tamb=25 °CSource

Overview

Manufacturer

IRLZ44N: Infineon Technologies
2N7000: onsemi

Object type

IRLZ44N: discrete
2N7000: discrete

Package

IRLZ44N: TO-220
2N7000: TO-92

Documented pins

IRLZ44N: 3
2N7000: 3

Interfaces

IRLZ44N: Digital
2N7000: Digital

Lifecycle

IRLZ44N: ACTIVE
2N7000: ACTIVE

Physical pin mapping

IRLZ44N: Unknown
2N7000: Unknown

Browser simulation

IRLZ44N: Not available
2N7000: Not available

Electrical

Channel

IRLZ44N: nSource
2N7000: nSource

Max Vds

IRLZ44N: 55 VSource
2N7000: 60 VSource

Vgs Threshold

IRLZ44N: 1 – 2 V @ Vds: Vds = Vgs (diode-connected), Id=250 uASource
Threshold is only the onset of conduction, not a fully-on gate voltage. Use the RDS(on) test conditions to choose gate drive.
2N7000: 2.1 V @ Vds: Vds = Vgs (diode-connected), Id=1 mASource

Max Vgs

IRLZ44N: Unknown
2N7000: 30 VSource
±30V, symmetric rating for current onsemi 2N7000TA/BU documentation.

Rds(on)

IRLZ44N: 22 mΩ @ Vgs=10 V, Id=17 ASource
Still just 0.025Ω at Vgs=5V and 0.035Ω at Vgs=4V — this is what 'logic level' buys you: it stays low-resistance without a full 10V gate drive, unlike the IRF540N.
2N7000: 5 Ω @ Vgs=10 V, Id=500 mASource
5.3Ω max at Vgs=4.5V, Id=75mA — usable but noticeably worse at true logic-level (not full 10V) gate drive.

Continuous Id

IRLZ44N: 47 A @ Tcase=25 °CSource
Drops off sharply with case temperature — don't expect anywhere near 47A without a heatsink and good PCB copper.
2N7000: 200 mA @ Tamb=25 °CSource

Gate Charge

IRLZ44N: Unknown
2N7000: Unknown

Logic Level

IRLZ44N: YesSource
2N7000: Unknown

Physical

Package

IRLZ44N: TO-220Source
2N7000: TO-92Source

Mounting

IRLZ44N: thtSource
2N7000: thtSource

Thermal

Max Power Dissipation

IRLZ44N: 110 W @ Tcase=25 °CSource
2N7000: 350 mW @ Tamb=25 °CSource

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Compare electronics parts

Choose 2–4 parts

Structured comparison

Overview

Manufacturer

Category

Object type

Package

Documented pins

Interfaces

Lifecycle

Physical pin mapping

Browser simulation

Electrical

Channel

Max Vds

Vgs Threshold

Max Vgs

Rds(on)

Continuous Id

Gate Charge

Logic Level

Physical

Package

Mounting

Thermal

Max Power Dissipation