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2N7000IRLZ44N

Structured comparison

Conditions and source links stay attached to each value. No automatic winner is declared.

Comparison of 2N7000, IRLZ44N
Attribute	2N70002N7000	IRLZ44NIRLZ44NPBF
Overview
Manufacturer	onsemi	Infineon Technologies
Category	MOSFET	MOSFET
Object type	discrete	discrete
Package	TO-92	TO-220
Documented pins	3	3
Interfaces	Digital	Digital
Lifecycle	ACTIVE	ACTIVE
Physical pin mapping	Unknown	Unknown
Browser simulation	Not available	Not available
Electrical
Channel	nSource	nSource
Max Vds	60 VSource	55 VSource
Vgs Threshold	2.1 V @ Vds: Vds = Vgs (diode-connected), Id=1 mASource	1 – 2 V @ Vds: Vds = Vgs (diode-connected), Id=250 uASource Threshold is only the onset of conduction, not a fully-on gate voltage. Use the RDS(on) test conditions to choose gate drive.
Max Vgs	30 VSource ±30V, symmetric rating for current onsemi 2N7000TA/BU documentation.	Unknown
Rds(on)	5 Ω @ Vgs=10 V, Id=500 mASource 5.3Ω max at Vgs=4.5V, Id=75mA — usable but noticeably worse at true logic-level (not full 10V) gate drive.	22 mΩ @ Vgs=10 V, Id=17 ASource Still just 0.025Ω at Vgs=5V and 0.035Ω at Vgs=4V — this is what 'logic level' buys you: it stays low-resistance without a full 10V gate drive, unlike the IRF540N.
Continuous Id	200 mA @ Tamb=25 °CSource	47 A @ Tcase=25 °CSource Drops off sharply with case temperature — don't expect anywhere near 47A without a heatsink and good PCB copper.
Gate Charge	Unknown	Unknown
Logic Level	Unknown	YesSource
Physical
Package	TO-92Source	TO-220Source
Mounting	thtSource	thtSource
Thermal
Max Power Dissipation	350 mW @ Tamb=25 °CSource	110 W @ Tcase=25 °CSource

Overview

Manufacturer

2N7000: onsemi
IRLZ44N: Infineon Technologies

Object type

2N7000: discrete
IRLZ44N: discrete

Package

2N7000: TO-92
IRLZ44N: TO-220

Documented pins

2N7000: 3
IRLZ44N: 3

Interfaces

2N7000: Digital
IRLZ44N: Digital

Lifecycle

2N7000: ACTIVE
IRLZ44N: ACTIVE

Physical pin mapping

2N7000: Unknown
IRLZ44N: Unknown

Browser simulation

2N7000: Not available
IRLZ44N: Not available

Electrical

Channel

2N7000: nSource
IRLZ44N: nSource

Max Vds

2N7000: 60 VSource
IRLZ44N: 55 VSource

Vgs Threshold

2N7000: 2.1 V @ Vds: Vds = Vgs (diode-connected), Id=1 mASource
IRLZ44N: 1 – 2 V @ Vds: Vds = Vgs (diode-connected), Id=250 uASource
Threshold is only the onset of conduction, not a fully-on gate voltage. Use the RDS(on) test conditions to choose gate drive.

Max Vgs

2N7000: 30 VSource
±30V, symmetric rating for current onsemi 2N7000TA/BU documentation.
IRLZ44N: Unknown

Rds(on)

2N7000: 5 Ω @ Vgs=10 V, Id=500 mASource
5.3Ω max at Vgs=4.5V, Id=75mA — usable but noticeably worse at true logic-level (not full 10V) gate drive.
IRLZ44N: 22 mΩ @ Vgs=10 V, Id=17 ASource
Still just 0.025Ω at Vgs=5V and 0.035Ω at Vgs=4V — this is what 'logic level' buys you: it stays low-resistance without a full 10V gate drive, unlike the IRF540N.

Continuous Id

2N7000: 200 mA @ Tamb=25 °CSource
IRLZ44N: 47 A @ Tcase=25 °CSource
Drops off sharply with case temperature — don't expect anywhere near 47A without a heatsink and good PCB copper.

Gate Charge

2N7000: Unknown
IRLZ44N: Unknown

Logic Level

2N7000: Unknown
IRLZ44N: YesSource

Physical

Package

2N7000: TO-92Source
IRLZ44N: TO-220Source

Mounting

2N7000: thtSource
IRLZ44N: thtSource

Thermal

Max Power Dissipation

2N7000: 350 mW @ Tamb=25 °CSource
IRLZ44N: 110 W @ Tcase=25 °CSource

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Compare electronics parts

Choose 2–4 parts

Structured comparison

Overview

Manufacturer

Category

Object type

Package

Documented pins

Interfaces

Lifecycle

Physical pin mapping

Browser simulation

Electrical

Channel

Max Vds

Vgs Threshold

Max Vgs

Rds(on)

Continuous Id

Gate Charge

Logic Level

Physical

Package

Mounting

Thermal

Max Power Dissipation